老哥俱乐部

CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
 PDF

蓝色科技感纹理布景画板-2

Introduction 1、TO-247package 50A 650V IGBT discrete；
2、The voltage level is 650V, the current level is 50A@Tc=100℃；
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications；
4、Low conduction loss, low switching loss, high reliability；
5、Use environmentally friendly materials and meet RoHS standards；
Features 1、Tjmax=175℃;
2、Positive temperature coefficient ；
3、High voltage 650V；
4、Low conduction loss, low switching loss, meet the high frequency application conditions；
5、The latest generation of micro trench design, a cost-effective product；
SPECIFICATION

DGW50N65CTL0

Related new products

13

IGBT low loss series

fengmian-画板-1

SOD-323HE Diode for Automotive 、Home Appliances, Etc

未标题-21画板-1

SKBPC75 High Current Three Phase Bridge Rectifiers

011-8

1200V 40mΩ SiC MOSFET

44

SGT N80-85V Power MOSFET

011-5

NP – sealed MOSFET for cooling fan

1

N150V MOSFET for Industrial Control

图片1

SMB-W Package EM540BG

fengmian-

New plug-in rectifier bridge -JC that follows the trend of flattening

33-2

DFN1006-3L Package Small Signal Device
【网站地图】